The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jun. 20, 2016
Applicant:

Freescale Semiconductor Inc., Austin, TX (US);

Inventors:

Ibrahim Khalil, Munich, DE;

Ebrahim M. Al Seragi, Mesa, AZ (US);

Jeffrey K. Jones, Chandler, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/195 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 2200/451 (2013.01);
Abstract

The embodiments described herein provide an amplifier device that utilizes bonding pad capacitance in an impedance matching network. In one specific embodiment, the amplifier device comprises: an amplifier formed on a semiconductor die, the amplifier including an amplifier input and an amplifier output, the amplifier configured to generate an amplified radio frequency (RF) signal at the amplifier output; and an impedance matching network coupled to the amplifier, the impedance matching network including a capacitor, where the capacitor includes a first plate, a second plate, and dielectric material between the first and second plates, where the first plate includes or is directly electrically coupled to a bond pad on the semiconductor die.


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