The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 24, 2015
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Inventor:
Masami Ishiura, Yokohama, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/227 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/10 (2006.01); H01S 5/12 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2275 (2013.01); H01S 5/1206 (2013.01); H01S 5/0202 (2013.01); H01S 5/0265 (2013.01); H01S 5/1014 (2013.01); H01S 5/1203 (2013.01); H01S 5/1231 (2013.01); H01S 5/2222 (2013.01); H01S 5/305 (2013.01); H01S 5/34306 (2013.01);
Abstract
A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.