The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
May. 01, 2014
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); H01L 41/187 (2006.01); C23C 18/12 (2006.01); H01L 49/02 (2006.01); H01L 41/318 (2013.01); H01L 41/319 (2013.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 27/11507 (2017.01); H01L 29/51 (2006.01); H01L 37/02 (2006.01); H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); C23C 18/1216 (2013.01); C23C 18/1254 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01); H01L 27/10805 (2013.01); H01L 27/11507 (2013.01); H01L 28/55 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 37/025 (2013.01); H01L 41/0815 (2013.01); H01L 41/318 (2013.01); H01L 41/319 (2013.01);
Abstract
A residual stress in a PZT type ferroelectric filmformed on a substrate bodyby a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric filmis crystal oriented in a (100) plane.