The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Mar. 09, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/4236 (2013.01); H01L 29/7825 (2013.01); H01L 29/7848 (2013.01);
Abstract
The present invention provides a FinFET device, including at least one fin structure, wherein the fin structure has a first-type well region, and a second-type well region adjacent to the first-type well region, a trench located in the fin structure and disposed between the first-type well region and the second-type well region, an insulating layer disposed in the trench, and a metal gate crossing over and disposed on the insulating layer.