The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Sep. 14, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsung-Yu Yang, Tainan, TW;
Cheng-Bo Shu, Tainan, TW;
Chung-Jen Huang, Tainan, TW;
Jing-Ru Lin, Kaohsiung, TW;
Jui-Yu Pan, Pingtung County, TW;
Yun-Chi Wu, Tainan, TW;
Yueh-Chieh Chu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a memory device includes forming trenches in a substrate to define an active region, filling an insulation material in the trenches, treating at least one portion of the insulation material, removing an upper portion of the insulation material from the trenches, so as to expose upper portions of side surfaces of the active region and to convert remaining portions of the insulation material in the trenches to shallow trench isolation (STI) disposed on opposite sides of the active region, forming a lower oxide layer, a middle charge trapping layer, and an upper oxide layer which cover the exposed upper portions of the side surfaces of the active region, an upper surface of the active region between the side surfaces of the active region, and the STI, and forming a gate layer on the upper oxide layer.