The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 17, 2012
Applicants:

Chun-fai Cheng, Hong Kong, HK;

Han-ting Tsai, Kaoshiung, TW;

An-shen Chang, Jubei, TW;

Hui-min Lin, Zhubei, TW;

Inventors:

Chun-Fai Cheng, Hong Kong, HK;

Han-Ting Tsai, Kaoshiung, TW;

An-Shen Chang, Jubei, TW;

Hui-Min Lin, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 29/6656 (2013.01); H01L 29/7848 (2013.01); H01L 29/66628 (2013.01);
Abstract

A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.


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