The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9799612 B1

Date of Patent:

Oct. 24, 2017

Filed:

Jul. 14, 2015

Semiconductor device and manufacturing method of the same

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventor:

Kouji Eguchi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Eduardo A Rodela

Int. Cl.

CPC ...

H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 21/3213 (2006.01); H01L 23/48 (2006.01);

U.S. Cl.

CPC ...

H01L 23/562 (2013.01); H01L 21/32135 (2013.01); H01L 21/561 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 21/78 (2013.01); H01L 23/3192 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 23/564 (2013.01);

Abstract

A semiconductor device includes a substrate, a laminated wiring layer unit, a nitride film disposed on the laminated wiring layer unit, a semiconductor element portion, a sealing portion surrounding the element portion. In the sealing portion, multiple wiring layers are connected with a sealing layer to configure a sealing structure which surrounds the element portion. The laminated wiring layer unit includes an uppermost layer which is made of material having higher adhesion to an uppermost wiring layer, and a protection insulating film made of material having higher adhesion to the sealing layer than the nitride film is disposed on the nitride film. In the sealing portion, a via-hole is defined in the protection insulating film, the nitride film, and the uppermost insulating film to partially expose the uppermost wiring layer. The sealing layer is embedded into the via-hole and is also disposed on a protection insulating film around the via-hole.

Find Patent Forward Citations