The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Sep. 14, 2015
Qualcomm Incorporated, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Kern Rim, San Diego, CA (US);
Da Yang, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Niladri Narayan Mojumder, San Diego, CA (US);
Vladimir Machkaoutsan, Wezemaal, BE;
Mustafa Badaroglu, Leuven, BE;
Choh Fei Yeap, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A fin-type semiconductor device includes a gate structure and a source/drain structure. The fin-type semiconductor device also includes a gate hardmask structure coupled to the gate structure. The gate hardmask structure comprises a first material. The fin-type semiconductor device further includes a source/drain hardmask structure coupled to the source/drain structure. The source/drain hardmask structure comprises a second material.