The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Sep. 04, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Wei-Hao Huang, New Taipei, TW;
Chia-Lin Lu, Taoyuan, TW;
Chun-Lung Chen, Tainan, TW;
Kun-Yuan Liao, Hsin-Chu, TW;
Feng-Yi Chang, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a method for forming an opening, including: first, a hard mask material layer is formed on a target layer, next, a tri-layer hard mask is formed on the hard mask material layer, where the tri-layer hard mask includes an bottom organic layer (ODL), a middle silicon-containing hard mask bottom anti-reflection coating (SHB) layer and a top photoresist layer, and an etching process is then performed, to remove parts of the tri-layer hard mask, parts of the hard mask material layer and parts of the target layer in sequence, so as to form at least one opening in the target layer, where during the step for removing parts of the hard mask material layer, a lateral etching rate of the hard mask material layer is smaller than a lateral etching rate of the ODL.