The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Mar. 03, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Thomas Schweinboeck, Grafing, DE;

Jesper Wittborn, Bromma, SE;

Erwin Bacher, Villach, AT;

Juergen Holzmueller, Vierkirchen, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 29/36 (2006.01); H01L 51/05 (2006.01); H01L 29/06 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/265 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01); H01L 22/30 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01); H01L 29/0692 (2013.01); H01L 29/36 (2013.01); H01L 51/0002 (2013.01); H01L 51/05 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.


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