The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Dec. 28, 2016
Ememory Technology Inc., Hsin-Chu, TW;
Wei-Zhe Wong, Hsinchu County, TW;
Hsin-Ming Chen, Hsinchu, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A method for programming an antifuse-type OTP memory cell is provided. Firstly, a first program voltage is provided to a gate terminal of an antifuse transistor. A first bit line voltage is transmitted to the antifuse transistor. A first voltage stress with a first polarity is provided to a gate oxide layer of the antifuse transistor to form a weak path between the gate terminal and the first drain/source terminal of the antifuse transistor. Secondly, a second program voltage is provided to the gate terminal of the antifuse transistor. A second bit line voltage is transmitted to the antifuse transistor. A second voltage stress with a second polarity is provided to the gate oxide layer of the antifuse transistor. Consequently, a program current is generated along the weak path to rupture the gate oxide layer above the first drain/source terminal.