The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 16, 2015
Jae-pil Shin, Suwon-si, KR;
Chang-woo Kang, Gwacheon-si, KR;
Jong-won Kim, Hwaseong-si, KR;
Ho-joon Lee, Goyang-si, KR;
Kyu-baik Chang, Seoul, KR;
Won-young Chung, Hwaseong-si, KR;
Jae-Pil Shin, Suwon-si, KR;
Chang-Woo Kang, Gwacheon-si, KR;
Jong-Won Kim, Hwaseong-si, KR;
Ho-Joon Lee, Goyang-si, KR;
Kyu-Baik Chang, Seoul, KR;
Won-Young Chung, Hwaseong-si, KR;
SAMSUNG EELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A method of detecting stress of an integrated circuit including first and second patterns formed from different materials may comprise: determining one or more stress detection points of the first pattern; dividing a region including a first stress detection point of the one or more stress detection points into a plurality of divided regions; calculating areas of the second pattern at the divided regions; and/or detecting a stress level applied to the first stress detection point of the first pattern by the second pattern based on the areas of the second pattern at the divided regions.