The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Feb. 20, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Che-Ming Chang, Longtan Township, TW;
Chih-Jen Chan, Changhua, TW;
Chung-Yen Chou, Hsinchu, TW;
Lee-Chuan Tseng, New Taipei, TW;
Shih-Wei Lin, Taipei, TW;
Yuan-Chih Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.