The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Sep. 05, 2013
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Minxian Max Zhang, Palo Alto, CA (US);
Alexandre M. Bratkovski, Palo Alto, CA (US);
R. Stanley Williams, Palo Alto, CA (US);
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Abstract
A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.