The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jun. 10, 2016
Applicants:
Yong-seok Chung, Seoul, KR;
Yoonjong Song, Hwaseong-si, KR;
Yongkyu Lee, Gwacheon-si, KR;
Gwanhyeob Koh, Seoul, KR;
Inventors:
Yong-Seok Chung, Seoul, KR;
Yoonjong Song, Hwaseong-si, KR;
Yongkyu Lee, Gwacheon-si, KR;
Gwanhyeob Koh, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 43/12 (2006.01); H01L 21/266 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/0273 (2013.01); H01L 21/266 (2013.01);
Abstract
The inventive concepts provide a method for forming a hard mask pattern. The method includes forming a hard mask layer on an etch target layer disposed on a substrate, forming a photoresist pattern having an opening exposing one region of the hard mask layer, performing an oxygen ion implantation process on the one region using the photoresist pattern as a mask to form an oxidized portion in the one region, and patterning the hard mask layer using the oxidized portion as an etch mask.