The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Mar. 25, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Gerben Doornbos, Leuven, BE;
Robert James Pascoe Lander, Leuven, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/105 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01);
Abstract
A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between the upper portion and the lower portion acts as a diode. The FinFET further includes: at least one layer of high-k dielectric material (for example SiN) adjacent at least one side of the fin for redistributing a potential drop more evenly over the diode. Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20.