The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Sep. 23, 2013
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventors:
John Chen, Palo Alto, CA (US);
Il Kwan Lee, San Ramon, CA (US);
Hong Chang, Cupertino, CA (US);
Wenjun Li, Shanghai, CN;
Anup Bhalla, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Assignee:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/42372 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01);
Abstract
A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of the body region.