The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Apr. 28, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Akimasa Kinoshita, Matsumoto, JP;
Masahito Otsuki, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A MOS gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an n-type silicon carbide substrate, an n-type drift layer and a p-type base layer by epitaxial growth. On the base front surface, in an edge termination structure region, a step portion occurring between the p-type base layer and the n-type drift layer, and a flat portion farther outward than the step portion are provided. In a surface layer of the n-type drift layer, a p-type base region constituting the MOS gate structure is provided so as to contact the p-type base layer. The outermost p-type base region extends from an active region into the flat portion and the entire lower side of this portion is covered by an innermost p-type region constituting an edge termination structure provided in the flat portion.