The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jun. 15, 2016
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chan-Hong Chern, Palo Alto, CA (US);
Chun-Lin Tsai, Hsin-Chu, TW;
Mark Chen, Hsinchu County, TW;
King-Yuen Wong, Hong Kong, HK;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
In one embodiment, a method of fabricating a semiconductor device having an isolated first transistor circuit and an isolated second transistor circuit is provided. The method comprises providing a silicon on insulator (SOI) wafer and fabricating an isolated first silicon region and an isolated second silicon region on the SOI wafer wherein each of the first silicon region and the second silicon region is bounded on its sides by a trench filled with insulator material. The method further comprises fabricating an active area comprising GaN on each of the first silicon region and the second silicon region to form the first transistor circuit and the second transistor circuit and fabricating source, drain, gate, and body connections for each of the first transistor circuit and the second transistor circuit.