The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Feb. 19, 2016
Applicants:

Hyeok-jun Son, Seoul, KR;

Wan-don Kim, Yongin-si, KR;

Hoon-joo NA, Hwaseong-si, KR;

Sang-jin Hyun, Suwon-si, KR;

Yoon-tae Hwang, Seoul, KR;

Jae-yeol Song, Seoul, KR;

Inventors:

Hyeok-jun Son, Seoul, KR;

Wan-don Kim, Yongin-si, KR;

Hoon-joo Na, Hwaseong-si, KR;

Sang-jin Hyun, Suwon-si, KR;

Yoon-tae Hwang, Seoul, KR;

Jae-yeol Song, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4958 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/7851 (2013.01);
Abstract

Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.


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