The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jun. 01, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ali Khakifirooz, Los Altos, CA (US);

Davood Shahrjerdi, White Plains, NY (US);

Herbert L. Ho, New Windsor, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/8242 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/92 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to a deep trench capacitor, integrated structures and methods of manufacture. The structure includes: a conductive material formed on an underside of an insulator layer and which acts as a back plate of a deep trench capacitor; an inner conductive layer extending through the insulator layer and an overlying substrate; and a dielectric liner between the inner conductive material and the conductive material, and formed on a sidewall of an opening within the insulator layer and the overlying substrate.


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