The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jan. 29, 2016
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Hidehiko Kira, Nagano, JP;

Norio Kainuma, Nagano, JP;

Takashi Kubota, Chikuma, JP;

Takumi Masuyama, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 23/3157 (2013.01); H01L 24/14 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54473 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/279 (2013.01); H01L 2224/2783 (2013.01); H01L 2224/27334 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/27632 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/29019 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29076 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29299 (2013.01); H01L 2224/3201 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/75301 (2013.01); H01L 2224/75745 (2013.01); H01L 2224/75753 (2013.01); H01L 2224/8113 (2013.01); H01L 2224/81132 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81205 (2013.01); H01L 2224/81207 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/8313 (2013.01); H01L 2224/83132 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/94 (2013.01); H01L 2924/0665 (2013.01);
Abstract

A first insulating film is applied onto a joining face of a semiconductor device including a connection terminal on a joining face, and the connection terminal is embedded inside the first insulating film. The second insulating film is formed on a joining target face of a joining target, which includes a connection target terminal on the joining target face, and the connection target terminal is embedded inside the second insulating film. The semiconductor device and the joining target are joined together by applying pressure and causing the semiconductor device and the joining target to make contact with each other.


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