The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jan. 26, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Joyeeta Nag, Clifton Park, NY (US);

Jim Shih-Chun Liang, Poughkeepsie, NY (US);

Domingo A. Ferrer Luppi, Fishkill, NY (US);

Atsushi Ogino, Fishkill, NY (US);

Andrew H. Simon, Fishkill, NY (US);

Michael P. Chudzik, Mountain View, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/53266 (2013.01);
Abstract

Aspects of the present disclosure include integrated circuit (IC) structures with metal plugs therein, and methods of forming the same. An IC fabrication method according to embodiments of the present disclosure can include: providing a structure including a via including a bulk semiconductor material therein, wherein the via further includes a cavity extending from a top surface of the via to an interior surface of the via, and wherein a portion of the bulk semiconductor material defines at least one sidewall of the cavity; forming a first metal level on the via, wherein the first metal level includes a contact opening positioned over the cavity of the via; forming a metal plug within the cavity to the surface of the via, such that the metal plug conformally contacts a sidewall of the cavity and the interior surface of the via, wherein the metal plug is laterally distal to an exterior sidewall of the via; and forming a contact within the contact opening of the first metal level.


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