The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Feb. 21, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Archana Venugopal, Dallas, TX (US);

Benjamin Stassen Cook, Rockwall, TX (US);

Luigi Colombo, Dallas, TX (US);

Robert Reid Doering, Garland, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53271 (2013.01); H01L 23/66 (2013.01); H01L 2223/6616 (2013.01);
Abstract

An integrated circuit includes an interconnect which includes a metal layer, a layer of graphene on at least one of the top surface of the interconnect or the bottom surface of the interconnect, and a layer of hexagonal boron nitride (hBN) on the layer of graphene, opposite from the metal layer. Dielectric material of the integrated circuit contacts the layer of hBN. The layer of graphene has one or more atomic layers of graphene. The layer of hBN is one to three atomic layers thick. The interconnect may have a lower graphene layer on the bottom surface of the metal layer with a lower hBN layer, and an upper graphene layer on the top surface of the metal layer, with an upper hBN layer.


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