The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Apr. 16, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yi-Chun Huang, Pingjhen, TW;
Chih-Hsiang Yao, Taipei, TW;
Jye-Yen Cheng, Taichung, TW;
Wen-Chuan Chiang, Hsin-Chu, TW;
Ying-Wen Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment semiconductor device includes a first conductive feature in a dielectric layer and a second conductive feature over the dielectric layer and electrically connected to the first conductive feature. The second conductive feature includes a dual damascene structure and further includes a top portion within both a line portion and a via portion of the second conductive feature and a bottom portion in the via portion of the second conductive feature. The bottom portion comprises a different conductive material than the top portion, and a thickness of the bottom portion is at least about twenty percent of a total thickness of the via portion of the second conductive feature.