The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

May. 19, 2015
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Tasuku Koyanagi, Tokyo, JP;

Noboru Takeda, Tokyo, JP;

Hiroshi Morikazu, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 37/00 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 33/00 (2010.01); B32B 43/00 (2006.01); B23K 20/00 (2006.01); B23K 20/10 (2006.01); B23K 26/08 (2014.01); B23K 26/50 (2014.01); B23K 26/0622 (2014.01); B23K 101/40 (2006.01); B23K 103/16 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 20/002 (2013.01); B23K 20/10 (2013.01); B23K 26/0624 (2015.10); B23K 26/0853 (2013.01); B23K 26/50 (2015.10); B32B 37/025 (2013.01); B32B 43/006 (2013.01); H01L 21/6835 (2013.01); H01L 33/0079 (2013.01); B23K 2201/40 (2013.01); B23K 2203/172 (2015.10); B23K 2203/56 (2015.10); B32B 2307/40 (2013.01); B32B 2310/028 (2013.01); B32B 2310/0409 (2013.01); B32B 2310/0843 (2013.01); B32B 2551/00 (2013.01); H01L 2221/6839 (2013.01); H01L 2221/68363 (2013.01);
Abstract

A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.


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