The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Sep. 16, 2016
Zing Semiconductor Corporation, Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
Richard R. Chang, Shanghai, CN;
ZING SEMICONDUCTOR CORPORATION, Shanghai, CN;
Abstract
The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a non-oxygenated gas mixture comprising deuterium gas and at least one kind of low active gas, and a rapid heating processing process is performed on a surface of the wafer to heat the wafer to a predetermined high temperature. Then, the wafer is placed in an environment filled with an oxygenated gas mixture, and a rapid cooling processing process is performed on a surface of the wafer. As a result, a denuded zone is formed on the surface of the wafer, deuterium atoms, which may be released to improve characteristics at an interface of semiconductor devices in a later fabrication process, are held in the wafer, and bulk micro-defects are formed far from the semiconductor devices.