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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793134 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Mar. 25, 2016

Etching method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yusuke Saitoh, Miyagi, JP;

Hironobu Ichikawa, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Pearne & Gordon LLP

Primary Examiner:

Stephanie Duclair

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0332 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/31144 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

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