The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Aug. 02, 2016
United Microelectronics Corporation, Hsinchu, TW;
Chun-Wei Yu, Tainan, TW;
Hsu Ting, Tainan, TW;
Chueh-Yang Liu, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Kuang-Hsiu Chen, Tainan, TW;
Yi-Liang Ye, Kaohsiung, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The invention provides a fabricating method of a FinFET, comprising: providing a substrate having fin structures; depositing an dielectric layer on the substrate filling between the fin structures; forming recesses to reveal a portion of the fin structure by removing a portion of the dielectric layer; performing a cleaning process on using a cleaning solution selected from one of a first solution, consisting of dHF and HO, and a second solution, consisting of dHF and DIO; forming a gate structure across on the fin structures; and forming a source/drain structure on the substrate at two lateral sides of the gate structure. The present invention also provides a fabricating method of a FinFET having an improved cleaning step using a cleaning solution having one of a third solution, consisting of dHF and DIO, and a fourth solution, consisting of NHOH and DIObefore formation of the source/drain structure.