The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Sep. 29, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Perry H. Pelley, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01); G11C 5/145 (2013.01); G11C 11/1675 (2013.01); G11C 13/0069 (2013.01);
Abstract
A non-volatile memory includes a first bit cell having a programmable resistive element coupled to a write bit line wherein the programmable resistive element is programmable to one of two resistive states, a resistive element coupled to the programmable resistive element at a circuit node, and a first transistor configured to operate in saturation during a read operation. The first transistor has a control electrode coupled to the circuit node and a first current electrode coupled to a read bit line.