The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jan. 03, 2014
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;
Jinmin Li, Beijing, CN;
Junxi Wang, Beijing, CN;
Qingfeng Kong, Beijing, CN;
Jinxia Guo, Beijing, CN;
Xiaoyan Yi, Beijing, CN;
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Abstract
The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.