The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

May. 24, 2013
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Goutam Chattopadhyay, Pasadena, CA (US);

Ken B. Cooper, Glendale, CA (US);

Emmanuel Decrossas, Pasadena, CA (US);

John J. Gill, La Crescenta, CA (US);

Cecile Jung-Kubiak, Pasadena, CA (US);

Choonsup Lee, La Palma, CA (US);

Robert Lin, Chino, CA (US);

Imran Mehdi, South Pasadena, CA (US);

Alejandro Peralta, Huntington Beach, CA (US);

Theodore Reck, Pasadena, CA (US);

Jose Siles, Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/20 (2006.01); G01S 7/02 (2006.01); G01S 13/88 (2006.01); G01S 13/89 (2006.01); G01J 5/00 (2006.01); G01S 7/03 (2006.01);
U.S. Cl.
CPC ...
G01J 5/20 (2013.01); G01S 7/02 (2013.01); G01S 13/887 (2013.01); G01S 13/89 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/204 (2013.01); G01S 7/036 (2013.01);
Abstract

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.


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