The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Oct. 14, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Katsumasa Kawasaki, San Jose, CA (US);

Sergio Fukuda Shoji, San Jose, CA (US);

Justin Phi, Milpitas, CA (US);

Daisuke Shimizu, Milpitas, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H01J 37/32146 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H01L 21/3065 (2013.01);
Abstract

Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.


Find Patent Forward Citations

Loading…