The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Feb. 08, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Moonkyu Park, Hwaseong-si, KR;

Hoonjoo Na, Hwaseong-si, KR;

Jaeyeol Song, Seoul, KR;

Sangjin Hyun, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first area and a second area, and a first gate pattern on the first area and a second gate pattern on the second area. The first gate pattern includes a first gate insulating pattern on the first area, a first gate barrier pattern on the first gate insulating pattern, and a first work function metal pattern on the first gate barrier pattern. The second gate pattern includes a second gate insulating pattern on the second area, a second gate barrier pattern on the second gate insulating pattern, and a second work function metal pattern on the second gate barrier pattern. The first gate barrier pattern includes a metal material different than the second gate barrier pattern.


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