The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Feb. 10, 2016
International Business Machines Corporation, Armonk, NY (US);
Lukas Czornomaz, Rueschlikon, CH;
Veeresh Vidyadhar Deshpande, Rueschlikon, CH;
Vladimir Djara, Rueschlikon, CH;
Jean Fompeyrine, Rueschlikon, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dual gate CMOS structure including a semiconductor substrate; a first channel structure including a first semiconductor material and a second channel structure including a second semiconductor material on the substrate. The first semiconductor material including SiGewhere x=0 to 1 and the second semiconductor material including a group III-V compound material. A first gate stack on the first channel structure includes: a first native oxide layer as an interface control layer, the first native oxide layer comprising an oxide of the first semiconductor material; a first high-k dielectric layer; a first metal gate layer. A second gate stack on the second channel structure includes a second high-k dielectric layer; a second metal gate layer. The interface between the second channel structure and the second high-k dielectric layer is free of any native oxides of the second semiconductor material.