The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 08, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shao-Hua Wang, Hsinchu, TW;

Ming-Te Chen, Hsinchu, TW;

Sheng-Wei Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); H01J 37/317 (2006.01); H01J 37/30 (2006.01); C23C 14/48 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); C23C 14/48 (2013.01); H01J 37/3007 (2013.01); H01J 2237/15 (2013.01); H01J 2237/31701 (2013.01);
Abstract

An ion beam generator includes a plurality of arc chambers, wherein each arc chamber of the plurality of arc chamber is integral with every arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers.


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