The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Sep. 10, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Lianjun Liu, Phoenix, AZ (US);
Philippe Bernard Roland Lance, Toulouse, FR;
David Joseph Monk, Mesa, AZ (US);
Babak A Taheri, Phoenix, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
An electric field sensor includes sense and reference cells. The sense cell produces a resistance that varies relative to an intensity of an electric field, and the reference cell produces a resistance that is invariable relative to the intensity of the electric field. An output signal indicative of the intensity of the electric field is determined using the difference between the resistances. A system includes an electric field source that outputs a digital test program as an electric field signal. The system further includes the electric field sensor formed with IC dies on a wafer. The electric field sensor receives the electric field signal. The received electric field signal is converted to the test program, and the test program is stored in memory on the wafer. The electric field source does not physically contact the dies, but can flood an entire surface of the wafer with the electric field signal.