The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Oct. 07, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chih-Kai Hsu, Tainan, TW;

Yu-Hsiang Hung, Tainan, TW;

Ssu-I Fu, Kaohsiung, TW;

Yu-Cheng Tung, Kaohsiung, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 27/0924 (2013.01); H01L 29/785 (2013.01);
Abstract

The present invention provides a semiconductor structure, including a substrate having a first conductivity region and a second conductivity region defined thereon, a plurality of first fin structures and at least one first gate structure disposed on the substrate and within the first conductivity region, a plurality of second fin structures and at least one second gate structure disposed on the substrate and within the second conductivity region, at least two first crown epitaxial layers disposed within the first conductivity region, a plurality of second epitaxial layers disposed within the second conductivity region, where the shape of the first crown epitaxial layer is different from that of the second epitaxial layer.


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