The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 18, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takeshi Ishizaki, Aichi, JP;
Junichi Wada, Mie, JP;
Atsuko Sakata, Mie, JP;
Kei Watanabe, Mie, JP;
Masayuki Kitamura, Mie, JP;
Daisuke Ikeno, Mie, JP;
Satoshi Wakatsuki, Mie, JP;
Hirotaka Ogihara, Mie, JP;
Shinya Okuda, Oita, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a substrate, a stacked body, a film having semi-conductivity or conductivity, and a memory film. The stacked body includes a plurality of metal layers, a plurality of insulating layers, and a plurality of intermediate layers stacked on a major surface of the substrate. The film extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the film and the metal layers. The metal layers are tungsten layers and the intermediate layers are tungsten nitride layers. Or the metal layers are molybdenum layers and the intermediate layers are molybdenum nitride layers.