The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Dec. 15, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Umberto M. Meotto, Rivoli, IT;
Giulio Albini, Boise, ID (US);
Paolo Tessariol, Boise, ID (US);
Paola Bacciaglia, Ornago, IT;
Marcello Mariani, Milan, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/02233 (2013.01); H01L 21/28282 (2013.01); H01L 21/76224 (2013.01); H01L 27/11573 (2013.01); H01L 29/0649 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
Methods of forming integrated circuit devices containing memory cells over a first region of a semiconductor substrate and gate structures over a second region of the semiconductor substrate recessed from the first region. The methods include forming a metal that is common to both the memory cells and the gate structures.