The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jun. 06, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xintuo Dai, Rexford, NY (US);

Brian Greene, Fishkill, NY (US);

Mahender Kumar, Fishkill, NY (US);

Daniel J. Dechene, Watervliet, NY (US);

Daniel Jaeger, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/265 (2006.01); H01L 21/3115 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823892 (2013.01); H01L 21/0271 (2013.01); H01L 21/0276 (2013.01); H01L 21/02118 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/31155 (2013.01); H01L 21/76213 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01);
Abstract

Methodologies for patterning and implantation are provided Embodiments include forming fins; forming an SiN over the fins; forming an a-Si layer over the SiN; forming and patterning a first patterning layer over the a-Si layer; etching through the a-Si layer using the first patterning layer as a mask; removing the first patterning layer; implanting ions in exposed groups of fins; forming and patterning a second patterning layer to expose a first group of fins and a portion of the a-Si layer on opposite sides of the first group of fins; implanting ions in a first region of the first group of fins; forming a third patterning layer over the first region of the first group of fins and exposing a second region of the first group of fins; and implanting ions in the second region of the first group of fins.


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