The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jun. 26, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Atsuko Sakata, Mie, JP;

Kei Watanabe, Mie, JP;

Junichi Wada, Mie, JP;

Masayuki Kitamura, Mie, JP;

Takeshi Ishizaki, Aichi, JP;

Shinya Okuda, Mie, JP;

Hirotaka Ogihara, Mie, JP;

Satoshi Wakatsuki, Mie, JP;

Daisuke Ikeno, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); H01L 21/02 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01J 37/32 (2006.01); C23C 14/56 (2006.01); C23C 16/44 (2006.01); C23C 16/54 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68764 (2013.01); C23C 14/568 (2013.01); C23C 16/4409 (2013.01); C23C 16/4585 (2013.01); C23C 16/54 (2013.01); H01J 37/32733 (2013.01); H01J 37/32899 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/6719 (2013.01); H01L 21/67161 (2013.01); H01L 21/67745 (2013.01); H01L 21/67757 (2013.01); H01L 21/68742 (2013.01); H01L 21/68771 (2013.01);
Abstract

A method of manufacturing a semiconductor device uses a semiconductor manufacturing apparatus including a turn table allowing placement of at least first and second semiconductor substrates and being capable of moving positions of the first and the second semiconductor substrates by turning, a first film forming chamber, and a second film forming chamber. The first and the second film forming chambers are provided with an opening capable of loading and unloading the first and the second semiconductor substrates by lifting and lowering the first and the second semiconductor substrates placed on the turn table. The method includes transferring the first and the second semiconductor substrates between the first and the second film forming chambers by turning the turn fable and lifting and lowering the first and the second semiconductor substrates placed on the turn table; and forming a stack of films above the first and the second semiconductor substrates.


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