The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Feb. 06, 2017
Lam Research Corporation, Fremont, CA (US);
Xin Zhang, Los Altos, CA (US);
Alan Jensen, Tracy, CA (US);
Gerardo Delgadino, Milpitas, CA (US);
Daniel Le, Santa Clara, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for selectively etching SiO and SiN with respect to SiGe or Si of a structure is provided. A plurality of cycles of atomic layer etching is provided, where each cycle comprises a fluorinated polymer deposition phase and an activation phase. The fluorinated polymer deposition phase comprises flowing a fluorinated polymer deposition gas comprising a fluorocarbon gas, forming the fluorinated polymer deposition gas into a plasma, which deposits a fluorocarbon polymer layer on the structure, and stopping the flow of the fluorinated polymer deposition gas. The activation phase comprises flowing an activation gas comprising an inert bombardment gas and H, forming the activation gas into a plasma, wherein the inert bombardment gas activates fluorine in the fluorinated polymer which with the plasma components from Hcause SiO and SiN to be selectively etched with respect to SiGe and Si, and stopping the flow of the activation gas.