The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Nov. 17, 2014
Applicant:

Psk Inc., Hwaseong-si, Gyeonggi-do, KR;

Inventor:

Chang Weon Lee, Hwaseong-si, KR;

Assignee:

PSK INC., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/50 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32834 (2013.01); C23C 16/4412 (2013.01); C23C 16/4585 (2013.01); H01J 37/32091 (2013.01);
Abstract

Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.


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