The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Feb. 23, 2017
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ya-Jui Lee, Hsinchu, TW;

Kuan-Fu Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A non-volatile memory and a programming method thereof are provided. The programming method for the non-volatile memory includes: setting at least one first isolation cell between a first side cell and at least one first pass cell of an inhibited memory string; cutting off the at least one first isolation cell and providing a pre-boosting voltage to a word line of the first side cell and at a first time point; turning on the at least one first isolation cell at a second time point for transporting the pre-boosting potential to channels of the at least one first pass cell and a primary cell at a second time period; and providing a boosting voltage to word lines of the at least one first pass cell during a boosting time period.


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