The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jul. 31, 2014
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Perry H. Pelley, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 13/00 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 8/14 (2013.01); G11C 13/003 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract
A memory cell includes a single bi-directional resistive memory element (BRME) having a first terminal directly connected to a first power rail and a second terminal coupled to an internal node; and a first transistor having a control electrode coupled to the internal node, and a first current electrode coupled to a first bitline, and a second current electrode coupled to one of a group consisting of: a read wordline and the first power rail.