The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Mar. 02, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Erica Chen, Cupertino, CA (US);
Ludovic Godet, Sunnyvale, CA (US);
Jun Xue, San Jose, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.