The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Dec. 05, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mayank Goel, Bangalore, IN;

Prasad Bhilawadi, Rabkav, IN;

Karthik Ns, Bangalore, IN;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03K 17/165 (2013.01); H03K 2217/0027 (2013.01);
Abstract

Some embodiments include apparatus and methods having a first node to receive a supply voltage, a second node to receive a first bias voltage, a third node to receive ground potential, a first circuit branch coupled between the first and second nodes, and a second circuit branch coupled between the first and third nodes. The first bias voltage is provided to a gate of a first transistor among a plurality of transistors coupled in series. The first and second circuit branches are arranged to provide a second bias voltage to gate of a second transistor among the plurality of transistors. The value of the second bias voltage is based on a value of the first bias voltage.


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