The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Jul. 18, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Wei-Chieh Chen, Taichung, TW;
Hao-Hsiung Lin, Taipei, TW;
Shu-Han Chen, Hsinchu, TW;
You-Ru Lin, New Taipei, TW;
Cheng-Hsien Wu, Hsinchu, TW;
Chih-Hsin Ko, Fongshan, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Abstract
Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.