The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Apr. 17, 2015
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/10 (2006.01); H01L 23/373 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 23/3738 (2013.01); H01L 29/1054 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/812 (2013.01);
Abstract
A nitride compound semiconductor has a substrate and a nitride compound semiconductor stack on the substrate. The nitride compound semiconductor stack includes a multilayer buffer layer, a channel layer on this multilayer buffer layer, and an electron supply layer on this channel layer. A recess extends from the surface of the electron supply layer through the channel layer and the multilayer buffer layer. A heat dissipation layer in this recess is contiguous to the multilayer buffer layer and the channel layer and has a higher thermal conductivity than the multilayer buffer layer.